Qorvo, supplier of innovative RF solutions, announced a series of 1200V silicon carbide (SiC) next-generation field effect transistors (FETs) with industry-leading resistance merit. The new UF4C/SC series of 1200V Gen 4 SiC FETs are suitable for mainstream 800V bus architectures in electric vehicle onboard chargers, industrial battery chargers, industrial power supplies, DC/DC solar converters, as well as welding machines, uninterruptible power supplies, and induction heating applications.
Expanding our 1200V range with higher performance Gen4 options will allow us to better serve engineers moving their bus designs to 800V. In electric vehicles, this transition to higher voltages is inevitable and these new devices, with four different RDS(on) classes, help designers choose the best possible SiC choice for each design.
—Anup Bhalla, Chief Engineer – Power Devices, UnitedSiC/Qorvo
The new UF4C/SC series is highlighted by the following best-in-class SiC FET figures of merit:
|Measure of merit||Where the|
|RDS(on) • A||1.35 m&-cm2|
|RDS(on) • Eoss||0.78 -µJ|
|RDS(on) • Coss, tr||4.5 -pF|
|RDS(on) • QG||0.9 -nC|
All RDS(on) options (23, 30, 53 and 70 milliohms) are offered in the industry standard 4-lead kelvin source TO-247 package, for cleaner shifting at higher performance levels. The 53 and 70 milliohm devices are also available in the TO-247 3-wire package. This series of parts has excellent reliability, based on the well-managed thermal performance resulting from an advanced silver sinter die attachment and an advanced wafer thinning process.
All 1200V SiC FETs are included in FET-Jet Calculator, a free online design tool that allows instant evaluation of the efficiency, component losses and junction temperature rise of devices used in a wide range of AC/DC and isolated/non-isolated DC. /DC converter topologies. Single and parallel devices can be compared under user-specified cooling conditions to enable optimal solutions.